DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMC4559DN8TC ZXMC4559DN8TC

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120371-ZXMC4559DN8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.1W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.6A, 2.6A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 20.4nC @ 10V
Max Input Capacitance: 1063pF @ 30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Mosfet Array N and P-Channel 60V 3.6A, 2.6A 2.1W Surface Mount 8-SO

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

MOSFET N/P-CH 60V 3.6A/2.6A 8SO Product overview: ZXMC4559DN8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.6A, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.6A, 2.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC4559DN8TC can be used for catalog matching and distributor lookup.