MOSFET N/P-CH 60V 3.6A/2.6A 8SO Product overview: ZXMC4559DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.6A, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.6A, 2.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC4559DN8TA can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 60V 3.6A, 2.6A 1.25W Surface Mount 8-SO
Mosfet Array N and P-Channel 60V 3.6A, 2.6A 1.25W Surface Mount 8-SO
Mosfet Array N and P-Channel 60V 3.6A, 2.6A 1.25W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 036931-ZXMC4559DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.6A, 2.6A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 20.4nC @ 10V
Max Input Capacitance: 1063pF @ 30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET N/P-CH 60V 3.6A/2.6A 8SO
MOSFET N/P-CH 60V 8SOIC
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-ZXMC4559DN8TA | ZXMC4559DN8DKR-ND | 036931-ZXMC4559DN8TA | ZXMC4559DN8TA | ZXMC4559DN8TA | ZXMC4559DN8TA | 233-ZXMC4559DN8TA |
| Product Name | 60V 3.6A 2.6A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMC4559DN8TA | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET | ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8 |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||
| PD | 2.1 milliwatts | 1250 milliwatts | 2100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
