DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMC3A18DN8TA ZXMC3A18DN8TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 129631-ZXMC3A18DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A, 4.8A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

MOSFET N/P-CH 30V 5.8A/4.8A 8SO Product overview: ZXMC3A18DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.8A, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.8A, 4.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC3A18DN8TA can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 30V 5.8A, 4.8A 1.8W Surface Mount 8-SO