DIODES Incorporated FET, MOSFET Arrays ZXMC3A16DN8TC

Mosfet Array N and P-Channel 30V 4.9A, 4.1A 1.25W Surface Mount 8-SO

Mosfet Array N and P-Channel 30V 4.9A, 4.1A 1.25W Surface Mount 8-SO

Mosfet Array N and P-Channel 30V 4.9A, 4.1A 1.25W Surface Mount 8-SO

MOSFET N/P-CH 30V 4.9A/4.1A 8SO Product overview: ZXMC3A16DN8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.9A, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.9A, 4.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC3A16DN8TC can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 057896-ZXMC3A16DN8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A, 4.1A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 17.5nC @ 10V
Max Input Capacitance: 796pF @ 25V
Maximum Rds On at Id,Vgs: 35 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited