DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM62N03GTA ZXM62N03GTA

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120364-ZXM62N03GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.4A (Ta), 4.7A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9.6nC @ 10V
Max Input Capacitance: 380pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 2.2A, 10V
Alternative Parts (Cross-Reference): FDT439N; ZXM62N03GTC; ZXM62N03GTA; BSP100;
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

N-Channel 30V 3.4A (Ta), 4.7A (Tc) 2W (Ta) Surface Mount SOT-223-3