DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM62N03E6TA ZXM62N03E6TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 057856-ZXM62N03E6TA
Packaging: Digi-Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Case / Package: SOT-23-6
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9.6nC @ 10V
Max Input Capacitance: 380pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 3.2A SOT-23-6 Product overview: ZXM62N03E6TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXM62N03E6TA can be used for catalog matching and distributor lookup.