DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM61P02FTC ZXM61P02FTC

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120363-ZXM61P02FTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 900mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3.5nC @ 4.5V Max Input Capacitance: 150pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 600 mOhm @ 610mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120363-ZXM61P02FTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 900mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3.5nC @ 4.5V Max Input Capacitance: 150pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 600 mOhm @ 610mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM61P02FTC - 1120363-ZXM61P02FTC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM61P02FTC
1120363-ZXM61P02FTC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM61P02FTC 1120363-ZXM61P02FTC
Manufacturer: Diodes Incorporated Win Source Part Number: 1120363-ZXM61P02FTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 900mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3.5nC @ 4.5V Max Input Capacitance: 150pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 600 mOhm @ 610mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120363-ZXM61P02FTC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 900mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3.5nC @ 4.5V
Max Input Capacitance: 150pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 600 mOhm @ 610mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - ZXM61P02FTC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXM61P02FTC-ND
Single FETs, MOSFETs ZXM61P02FTC-ND
P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3

P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXM61P02FTC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXM61P02FTC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXM61P02FTC
MOSFET P-CH 20V 900MA SOT23-3

MOSFET P-CH 20V 900MA SOT23-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1120363-ZXM61P02FTC ZXM61P02FTC-ND ZXM61P02FTC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXM61P02FTC Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 625 milliwatts
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