DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP2110ASTZ ZVP2110ASTZ

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120326-ZVP2110ASTZ Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: E-Line (TO-92 compatible) Dimension: E-Line-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 230mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 375mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120326-ZVP2110ASTZ Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: E-Line (TO-92 compatible) Dimension: E-Line-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 230mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 375mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP2110ASTZ - 1120326-ZVP2110ASTZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP2110ASTZ
1120326-ZVP2110ASTZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP2110ASTZ 1120326-ZVP2110ASTZ
Manufacturer: Diodes Incorporated Win Source Part Number: 1120326-ZVP2110ASTZ Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: E-Line (TO-92 compatible) Dimension: E-Line-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 230mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 375mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120326-ZVP2110ASTZ
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: E-Line (TO-92 compatible)
Dimension: E-Line-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 230mA (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 375mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZVP2110ASTZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZVP2110ASTZ
Single FETs, MOSFETs ZVP2110ASTZ
MOSFET P-CH 100V 230MA E-LINE

MOSFET P-CH 100V 230MA E-LINE

Supplier's Site Datasheet
Single FETs, MOSFETs - ZVP2110ASTZ-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVP2110ASTZ-ND
Single FETs, MOSFETs ZVP2110ASTZ-ND
P-Channel 100V 230mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)

P-Channel 100V 230mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET P-Chnl 100V

MOSFET P-Chnl 100V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVP2110ASTZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVP2110ASTZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVP2110ASTZ
MOSFET P-CH 100V 230MA E-LINE

MOSFET P-CH 100V 230MA E-LINE

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1120326-ZVP2110ASTZ ZVP2110ASTZ ZVP2110ASTZ-ND ZVP2110ASTZ ZVP2110ASTZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP2110ASTZ Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 100 volts 100 volts
PD 700 milliwatts 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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