DIODES Incorporated FETs - Single - ZVP2106A ZVP2106A

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1283334-ZVP2106A Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com/ Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 700mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 280mA Rds On (Maximum) at Id, Vgs: 5Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 100pF at 18V
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1283334-ZVP2106A Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com/ Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 700mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 280mA Rds On (Maximum) at Id, Vgs: 5Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 100pF at 18V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - ZVP2106A - 1283334-ZVP2106A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - ZVP2106A
1283334-ZVP2106A
FETs - Single - ZVP2106A 1283334-ZVP2106A
Manufacturer: Diodes Incorporated Win Source Part Number: 1283334-ZVP2106A Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com/ Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 700mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 280mA Rds On (Maximum) at Id, Vgs: 5Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 100pF at 18V

Manufacturer: Diodes Incorporated
Win Source Part Number: 1283334-ZVP2106A
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com/
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 700mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 280mA
Rds On (Maximum) at Id, Vgs: 5Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 100pF at 18V

Buy Now
Singapore, Singapore
60V 280MA MOSFET Transistor
278-ZVP2106A
60V 280MA MOSFET Transistor 278-ZVP2106A
MOSFET P-CH 60V 280MA TO92-3 Product overview: ZVP2106A from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 280MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 280MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZVP2106A can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 280MA TO92-3 Product overview: ZVP2106A from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 280MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 280MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZVP2106A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - ZVP2106A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVP2106A-ND
Single FETs, MOSFETs ZVP2106A-ND
P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92

P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92

Buy Now Datasheet
Single FETs, MOSFETs - ZVP2106A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZVP2106A
Single FETs, MOSFETs ZVP2106A
MOSFET P-CH 60V 280MA TO92-3

MOSFET P-CH 60V 280MA TO92-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
ZVP2106A
MOSFET ZVP2106A
MOSFET P-Chnl 60V

MOSFET P-Chnl 60V

Buy Now Datasheet
P Channel Dmos Fet, -60V, 280Ma, To-92; Channel Type Diodes Inc. - 85K9995 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Dmos Fet, -60V, 280Ma, To-92; Channel Type Diodes Inc.
85K9995
P Channel Dmos Fet, -60V, 280Ma, To-92; Channel Type Diodes Inc. 85K9995
P CHANNEL DMOS FET, -60V, 280mA, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:280mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

P CHANNEL DMOS FET, -60V, 280mA, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:280mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVP2106A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVP2106A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVP2106A
MOSFET P-CH 60V 280MA TO92-3

MOSFET P-CH 60V 280MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1283334-ZVP2106A 278-ZVP2106A ZVP2106A-ND ZVP2106A ZVP2106A 85K9995 ZVP2106A
Product Name FETs - Single - ZVP2106A 60V 280MA MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET P Channel Dmos Fet, -60V, 280Ma, To-92; Channel Type Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 60 volts 60 volts 60 volts
PD 700 milliwatts 700 milliwatts 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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