MOSFET P-CH 60V 280MA TO92-3
P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92
Manufacturer: Diodes Incorporated
Win Source Part Number: 1283334-ZVP2106A
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com/
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 700mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 280mA
Rds On (Maximum) at Id, Vgs: 5Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 100pF at 18V
MOSFET P-CH 60V 280MA TO92-3
P CHANNEL DMOS FET, -60V, 280mA, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:280mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
| Product Number | ZVP2106A | ZVP2106A-ND | 1283334-ZVP2106A | ZVP2106A | ZVP2106A | 85K9995 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - ZVP2106A | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Dmos Fet, -60V, 280Ma, To-92; Channel Type Diodes Inc. |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 280 milliamps | |||||
| PD | 700 milliwatts | 700 milliwatts |