DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single ZVNL110A

Win Source Part Number: 1109147-ZVNL110A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 4,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): ZVNL110A.;
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: TN0110N3,ZVNL110A-NDR
Base Product Number: ZVNL110
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V

N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole TO-92