DIODES Incorporated Single FETs, MOSFETs ZVN4310GTC

Description
N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223-3
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Description
N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223-3
Request a Quote Datasheet

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Single FETs, MOSFETs - ZVN4310GTC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVN4310GTC-ND
Single FETs, MOSFETs ZVN4310GTC-ND
N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223-3

N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310GTC - 1120315-ZVN4310GTC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310GTC
1120315-ZVN4310GTC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310GTC 1120315-ZVN4310GTC
Manufacturer: Diodes Incorporated Win Source Part Number: 1120315-ZVN4310GTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.67A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120315-ZVN4310GTC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.67A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVN4310GTC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVN4310GTC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVN4310GTC
MOSFET N-CH 100V 1.67A SOT223

MOSFET N-CH 100V 1.67A SOT223

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZVN4310GTC-ND 1120315-ZVN4310GTC ZVN4310GTC
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310GTC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223
V(BR)DSS 100 volts
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