DIODES Incorporated Single FETs, MOSFETs ZVN4310A

Description
MOSFET N-CH 100V 900MA TO92-3
  • Single FETs, MOSFETs - ZVN4310A - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310A - 1120314-ZVN4310A - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - ZVN4310A-ND - DigiKey
    DigiKey
  • Transistor - 24685420 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVN4310A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 100V, 900Ma To-92; Channel Type Diodes Inc. - 98K4108 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 100V 900MA TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZVN4310A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZVN4310A
Single FETs, MOSFETs ZVN4310A
MOSFET N-CH 100V 900MA TO92-3

MOSFET N-CH 100V 900MA TO92-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310A - 1120314-ZVN4310A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310A
1120314-ZVN4310A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310A 1120314-ZVN4310A
Manufacturer: Diodes Incorporated Win Source Part Number: 1120314-ZVN4310A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 850mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 900mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120314-ZVN4310A
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 850mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 900mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZVN4310A-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVN4310A-ND
Single FETs, MOSFETs ZVN4310A-ND
N-Channel 100V 900mA (Ta) 850mW (Ta) Through Hole TO-92

N-Channel 100V 900mA (Ta) 850mW (Ta) Through Hole TO-92

Buy Now Datasheet
Transistor - 24685420 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
24685420
Transistor 24685420
POWER MOSFET, N CHANNEL, 100 V, 900 MA, 0.65 OHM, TO-226AA, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 100 V, 900 MA, 0.65 OHM, TO-226AA, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVN4310A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVN4310A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVN4310A
MOSFET N-CH 100V 900MA TO92-3

MOSFET N-CH 100V 900MA TO92-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
ZVN4310A
MOSFET ZVN4310A
MOSFET N-Chnl 100V

MOSFET N-Chnl 100V

Buy Now Datasheet
N Channel Mosfet, 100V, 900Ma To-92; Channel Type Diodes Inc. - 98K4108 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 900Ma To-92; Channel Type Diodes Inc.
98K4108
N Channel Mosfet, 100V, 900Ma To-92; Channel Type Diodes Inc. 98K4108
N CHANNEL MOSFET, 100V, 900mA TO-92; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:900mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 900mA TO-92; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:900mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number ZVN4310A 1120314-ZVN4310A ZVN4310A-ND 24685420 ZVN4310A ZVN4310A 98K4108
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4310A Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 100V, 900Ma To-92; Channel Type Diodes Inc.
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 900 milliamps 900 milliamps
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