DIODES Incorporated Single FETs, MOSFETs ZVN4210A

Description
N-Channel 100V 450mA (Ta) 700mW (Ta) Through Hole TO-92
Request a Quote Datasheet
Description
N-Channel 100V 450mA (Ta) 700mW (Ta) Through Hole TO-92
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZVN4210A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVN4210A-ND
Single FETs, MOSFETs ZVN4210A-ND
N-Channel 100V 450mA (Ta) 700mW (Ta) Through Hole TO-92

N-Channel 100V 450mA (Ta) 700mW (Ta) Through Hole TO-92

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4210A - 1120308-ZVN4210A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4210A
1120308-ZVN4210A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4210A 1120308-ZVN4210A
Manufacturer: Diodes Incorporated Win Source Part Number: 1120308-ZVN4210A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Audio, Automotive

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120308-ZVN4210A
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 450mA (Ta)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Audio, Automotive

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVN4210A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVN4210A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVN4210A
MOSFET N-CH 100V 450MA TO92-3

MOSFET N-CH 100V 450MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
ZVN4210A
MOSFET ZVN4210A
MOSFET N-Chnl 100V

MOSFET N-Chnl 100V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number ZVN4210A-ND 1120308-ZVN4210A ZVN4210A ZVN4210A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4210A Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
V(BR)DSS 100 volts
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