DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4206AVSTOA ZVN4206AVSTOA

Manufacturer: Diodes Incorporated
Win Source Part Number: 057960-ZVN4206AVSTOA
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: E-Line (TO-92 compatible)
Dimension: E-Line-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

MOSFET N-CH 60V 600MA TO92-3 Product overview: ZVN4206AVSTOA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 600MA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ZVN4206AVSTOA can be used for catalog matching and distributor lookup.