DIODES Incorporated Single FETs, MOSFETs ZVN4206ASTOA

Description
N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)
Request a Quote Datasheet
Description
N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZVN4206ASTOA-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVN4206ASTOA-ND
Single FETs, MOSFETs ZVN4206ASTOA-ND
N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)

N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4206ASTOA - 1120303-ZVN4206ASTOA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4206ASTOA
1120303-ZVN4206ASTOA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4206ASTOA 1120303-ZVN4206ASTOA
Manufacturer: Diodes Incorporated Win Source Part Number: 1120303-ZVN4206ASTOA Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: E-Line (TO-92 compatible) Dimension: E-Line-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120303-ZVN4206ASTOA
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: E-Line (TO-92 compatible)
Dimension: E-Line-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVN4206ASTOA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVN4206ASTOA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVN4206ASTOA
MOSFET N-CH 60V 600MA E-LINE

MOSFET N-CH 60V 600MA E-LINE

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZVN4206ASTOA-ND 1120303-ZVN4206ASTOA ZVN4206ASTOA
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVN4206ASTOA Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type E-Line-3 TO-92; SOT3; E-Line (TO-92 compatible)
V(BR)DSS 60 volts
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