DIODES Incorporated Single FETs, MOSFETs ZVN3320FTA

MOSFET N-CH 200V 60MA SOT23-3

N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3

N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3

N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3

MOSFET N-CH 200V 60MA SOT23-3 Product overview: ZVN3320FTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 60MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 60MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZVN3320FTA can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 036837-ZVN3320FTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330mW (Ta)
Family Name: ZVN3320F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 60mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 45pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 Ohm @ 100mA, 10V
Alternative Parts (Cross-Reference): ZVN3320F; ZVN3320FTC ;
Introduction Date: September 19, 1997
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance