DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - ZTX869STZ ZTX869STZ

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120279-ZTX869STZ
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 200°C (TJ)
Case / Package: E-Line (TO-92 compatible)
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Max Vce (sat): 220mV @ 100mA, 5A
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 1A, 1V
Maximum Power Dissipation: 1.2W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor NPN 25V 5A 100MHz 1.2W Through Hole E-Line (TO-92 compatible)

TRANS NPN 25V 5A E-LINE Product overview: ZTX869STZ from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZTX869STZ can be used for catalog matching and distributor lookup.