DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - ZTX855 ZTX855

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120274-ZTX855 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 90MHz Transistor Polarity: NPN Family Name: ZTX855 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: E-Line (TO-92 compatible) Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 150V Max Vce (sat): 260mV @ 400mA, 4A Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1A, 5V Maximum Power Dissipation: 1.2W Alternative Parts (Cross-Reference): ZTX855STZ; ZTX855STOA ; ZTX855STOB; Introduction Date: October 29, 1997 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Automation & Process Control, Audio
  • TRANSISTORS - Transistors (BJT) - Single - ZTX855 - 1120274-ZTX855 - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - ZTX855DI-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - ZTX855 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZTX855 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Trans, Npn, 150V, 4A, 200Deg C, 1.58W Rohs Compliant Diodes Inc. - 29AK9092 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120274-ZTX855 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 90MHz Transistor Polarity: NPN Family Name: ZTX855 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: E-Line (TO-92 compatible) Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 150V Max Vce (sat): 260mV @ 400mA, 4A Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1A, 5V Maximum Power Dissipation: 1.2W Alternative Parts (Cross-Reference): ZTX855STZ; ZTX855STOA ; ZTX855STOB; Introduction Date: October 29, 1997 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Automation & Process Control, Audio
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - ZTX855 - 1120274-ZTX855 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - ZTX855
1120274-ZTX855
TRANSISTORS - Transistors (BJT) - Single - ZTX855 1120274-ZTX855
Manufacturer: Diodes Incorporated Win Source Part Number: 1120274-ZTX855 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 90MHz Transistor Polarity: NPN Family Name: ZTX855 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: E-Line (TO-92 compatible) Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 150V Max Vce (sat): 260mV @ 400mA, 4A Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1A, 5V Maximum Power Dissipation: 1.2W Alternative Parts (Cross-Reference): ZTX855STZ; ZTX855STOA ; ZTX855STOB; Introduction Date: October 29, 1997 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Automation & Process Control, Audio

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120274-ZTX855
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 90MHz
Transistor Polarity: NPN
Family Name: ZTX855
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 200°C (TJ)
Case / Package: E-Line (TO-92 compatible)
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 150V
Max Vce (sat): 260mV @ 400mA, 4A
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1A, 5V
Maximum Power Dissipation: 1.2W
Alternative Parts (Cross-Reference): ZTX855STZ; ZTX855STOA ; ZTX855STOB;
Introduction Date: October 29, 1997
ECCN: EAR99
Country of Origin: China, Germany
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Automotive, Automation & Process Control, Audio

Buy Now Datasheet
Single Bipolar Transistors - ZTX855DI-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
ZTX855DI-ND
Single Bipolar Transistors ZTX855DI-ND
Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Through Hole E-Line (TO-92 compatible)

Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Through Hole E-Line (TO-92 compatible)

Buy Now Datasheet
Single Bipolar Transistors - ZTX855 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
ZTX855
Single Bipolar Transistors ZTX855
TRANS NPN 150V 4A E-LINE

TRANS NPN 150V 4A E-LINE

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
ZTX855
Bipolar Transistors - BJT ZTX855
Bipolar Transistors - BJT NPN Big Chip SELine

Bipolar Transistors - BJT NPN Big Chip SELine

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZTX855 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ZTX855
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ZTX855
TRANS NPN 150V 4A E-LINE

TRANS NPN 150V 4A E-LINE

Supplier's Site
Trans, Npn, 150V, 4A, 200Deg C, 1.58W Rohs Compliant Diodes Inc. - 29AK9092 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 150V, 4A, 200Deg C, 1.58W Rohs Compliant Diodes Inc.
29AK9092
Trans, Npn, 150V, 4A, 200Deg C, 1.58W Rohs Compliant Diodes Inc. 29AK9092
TRANS, NPN, 150V, 4A, 200DEG C, 1.58W ROHS COMPLIANT: YES

TRANS, NPN, 150V, 4A, 200DEG C, 1.58W ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 1120274-ZTX855 ZTX855DI-ND ZTX855 ZTX855 ZTX855 29AK9092
Product Name TRANSISTORS - Transistors (BJT) - Single - ZTX855 Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Npn, 150V, 4A, 200Deg C, 1.58W Rohs Compliant Diodes Inc.
Polarity NPN; NPN NPN NPN; NPN NPN
Package Type TO-92; SOT3; E-Line (TO-92 compatible) E-Line-3 TO-92; E-Line-3 TO-92; E-Line (TO-92 compatible) TO-3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps
VCEO 150 volts 150 volts 150 volts
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