DIODES Incorporated Bipolar Transistors - BJT ZTX788ASTZ

PNP silicon planar medium power transistor designed for high gain and low saturation voltage applications, housed in a TO92-compatible package. It has a collector-emitter voltage rating of -15 V, a continuous collector current of -3 A, and a power dissipation of 1 W at 25°C, derating at 5.7 mW/°C above that temperature. The junction-to-ambient thermal resistance is 175°C/W with minimal PCB copper area, and 116°C/W with 1 square inch of copper. The static forward current gain ranges from 200 to 800 depending on collector current, with a transition frequency of up to 150 MHz. Operating and storage temperature ranges from -55°C to +200°C.