DIODES Incorporated Single Bipolar Transistors ZTX649STZ

Description
Bipolar (BJT) Transistor NPN 25V 2A 240MHz 1W Through Hole E-Line (TO-92 compatible)
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Description
Bipolar (BJT) Transistor NPN 25V 2A 240MHz 1W Through Hole E-Line (TO-92 compatible)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 31-ZTX649STZTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
31-ZTX649STZTB-ND
Single Bipolar Transistors 31-ZTX649STZTB-ND
Bipolar (BJT) Transistor NPN 25V 2A 240MHz 1W Through Hole E-Line (TO-92 compatible)

Bipolar (BJT) Transistor NPN 25V 2A 240MHz 1W Through Hole E-Line (TO-92 compatible)

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Single Bipolar Transistors - 31-ZTX649STZCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
31-ZTX649STZCT-ND
Single Bipolar Transistors 31-ZTX649STZCT-ND
TRANS NPN 25V 2A E-LINE

TRANS NPN 25V 2A E-LINE

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - ZTX649STZ - 051987-ZTX649STZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - ZTX649STZ
051987-ZTX649STZ
TRANSISTORS - Transistors (BJT) - Single - ZTX649STZ 051987-ZTX649STZ
Manufacturer: Diodes Incorporated Win Source Part Number: 051987-ZTX649STZ Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 240MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: E-Line (TO-92 compatible) Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1A, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 051987-ZTX649STZ
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 240MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 200°C (TJ)
Case / Package: E-Line (TO-92 compatible)
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1A, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZTX649STZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ZTX649STZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ZTX649STZ
TRANS NPN 25V 2A E-LINE

TRANS NPN 25V 2A E-LINE

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
ZTX649STZ
Bipolar Transistors - BJT ZTX649STZ
Bipolar Transistors - BJT NPN Super E-Line

Bipolar Transistors - BJT NPN Super E-Line

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 31-ZTX649STZTB-ND 051987-ZTX649STZ ZTX649STZ ZTX649STZ
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - ZTX649STZ Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN
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