TRANS NPN DARL 100V 0.8A E-LINE
Win Source Part Number: 1106387-ZTX614QSTZ
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Box (TB)
Standard Package: 2,000
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 800 mA
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-ZTX614QSTZTB
PWR MID PERF TRANSISTOR EP3 AMMO
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 31-ZTX614QSTZTB-ND | 1106387-ZTX614QSTZ | ZTX614QSTZ |
| Product Name | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | |
| Package Type | E-Line-3, Formed Leads | TO-92; SOT3 | |
| IC(max) | 800 milliamps | 800 milliamps | |
| Power Gain | 10000 dB |
