The ZTX550 is a PNP silicon planar transistor designed for medium power applications such as switching and amplification. It is packaged in a TO-92 case and supports a continuous collector current of 1 A, a collector-emitter voltage of 45 V, and a power dissipation of 1 W at 25°C. The transistor has a collector-base breakdown voltage of 60 V, an emitter-base breakdown voltage of 5 V, and a current gain (hFE) ranging from 100 to 300 at a collector current of 150 mA. The transition frequency is 150 MHz, and the operating and storage temperature range is from -55°C to +200°C.
PWR MID PERF TRANSISTOR EP3 AMMO Product overview: ZTX550QSTZ from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZTX550QSTZ can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-ZTX550QSTZ |
| Product Name | Bipolar Transistor |
| Package Type | Tape & Box (TB) |
