DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN10LP VN10LP

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036412-VN10LP Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036412-VN10LP Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN10LP - 036412-VN10LP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN10LP
036412-VN10LP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN10LP 036412-VN10LP
Manufacturer: Diodes Incorporated Win Source Part Number: 036412-VN10LP Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 036412-VN10LP
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - VN10LP-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN10LP-ND
Single FETs, MOSFETs VN10LP-ND
N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92

N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92

Buy Now Datasheet
Single FETs, MOSFETs - VN10LP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VN10LP
Single FETs, MOSFETs VN10LP
MOSFET N-CH 60V 270MA TO92-3

MOSFET N-CH 60V 270MA TO92-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
VN10LP
MOSFET VN10LP
MOSFET N Chnl. 60V

MOSFET N Chnl. 60V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN10LP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN10LP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN10LP
MOSFET N-CH 60V 270MA TO92-3

MOSFET N-CH 60V 270MA TO92-3

Supplier's Site
N Channel Dmos Fet, 60V, 270Ma, To-92; Channel Type Diodes Inc. - 98K2375 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Dmos Fet, 60V, 270Ma, To-92; Channel Type Diodes Inc.
98K2375
N Channel Dmos Fet, 60V, 270Ma, To-92; Channel Type Diodes Inc. 98K2375
N CHANNEL DMOS FET, 60V, 270mA, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

N CHANNEL DMOS FET, 60V, 270mA, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors
Product Number 036412-VN10LP VN10LP-ND VN10LP VN10LP VN10LP 98K2375
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN10LP Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Dmos Fet, 60V, 270Ma, To-92; Channel Type Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 625 milliwatts 625 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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