MOSFET N-CH 60V 270MA TO92-3
N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92
Manufacturer: Diodes Incorporated
Win Source Part Number: 036412-VN10LP
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 270MA TO92-3 Product overview: VN10LP from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 270MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 270MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VN10LP can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 270MA TO92-3
N CHANNEL DMOS FET, 60V, 270mA, TO-92; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | VN10LP | VN10LP-ND | 036412-VN10LP | 278-VN10LP | VN10LP | VN10LP | 98K2375 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN10LP | 60V 270MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Dmos Fet, 60V, 270Ma, To-92; Channel Type Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 270 milliamps | ||||||
| PD | 625 milliwatts | 625 milliwatts | 625 milliwatts |
