DIODES Incorporated Bipolar Transistors - BJT MMSTA56Q-7

The MMSTA56Q-7 is a PNP silicon bipolar junction transistor designed for automotive applications, housed in an ultra-compact SOT323 surface-mount package measuring 2.15 mm x 2.10 mm. It has a collector-emitter voltage rating of -80 V and a continuous collector current of -500 mA, with a power dissipation of 200 mW. The device complies with AEC-Q101 standards for high reliability and is fully RoHS compliant, halogen- and antimony-free. It features a thermal resistance of 625 °C/W and an operating temperature range of -55 °C to +150 °C. The transistor is ESD hardened with a human body model rating of 4,000 V and is supplied in a 3,000-unit reel. Its complementary NPN counterpart is the MMSTA06Q.