The MMST4401 is an NPN bipolar junction transistor designed for medium power amplification and switching applications. It is packaged in a SOT-323 case with dimensions of 1.80-2.20 mm in height, 1.15-1.35 mm in width, and 0.80-1.00 mm in thickness. The device has a collector-emitter voltage rating of 40 V, a continuous collector current of 600 mA, and a total power dissipation of 150 mW on an FR-4 board. The collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current, and 0.75 V at 500 mA collector current and 50 mA base current. The DC current gain ranges from 40 to 300 depending on operating conditions. The transition frequency is 250 MHz. The case is made of UL 94 V-0 rated "Green" molding compound and is RoHS 2002/95/EC compliant. The junction temperature range is -55°C to +150°C, and storage temperature range is -55°C to +150°C.
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-323 Product overview: MMST4401 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.6A, 150mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.6A, 150mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMST4401 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMST4401 |
| Product Name | 40V 0.6A 150mW Bipolar Transistor |
| IC(max) | 600 milliamps |
