The MMST2907A is a PNP bipolar junction transistor designed for medium power amplification and switching applications. It is packaged in a SOT-323 plastic case and has a collector current rating of 600 mA, a collector-emitter voltage of 60 V, and a power dissipation of 200 mW. The device meets RoHS 2002/95/EC and is halogen free, with a UL 94 V-0 flammability rating. It has a junction temperature rating of 150 °C and a thermal resistance of 500 °C/W. The DC current gain ranges from 50 to 300 depending on collector current, and the collector-emitter saturation voltage is specified up to -1.6 V at -500 mA collector current. The transition frequency is 200 MHz. Device marking is K3F.
Trans GP BJT PNP 60V 0.6A 200mW 3-Pin SOT-323 Product overview: MMST2907A from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.6A, 200mW. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 0.6A, 200mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMST2907A can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMST2907A |
| Product Name | 60V 0.6A 200mW Bipolar Transistor |
| IC(max) | 600 milliamps |
