DIODES Incorporated TRANSISTORS - Transistors (BJT) - Arrays - MMDT2227M-7 MMDT2227M-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 121694-MMDT2227M-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz, 200MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V, 60V Max Vce (sat): 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 300mW
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 121694-MMDT2227M-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz, 200MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V, 60V Max Vce (sat): 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 300mW
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TRANSISTORS - Transistors (BJT) - Arrays - MMDT2227M-7 - 121694-MMDT2227M-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - MMDT2227M-7
121694-MMDT2227M-7
TRANSISTORS - Transistors (BJT) - Arrays - MMDT2227M-7 121694-MMDT2227M-7
Manufacturer: Diodes Incorporated Win Source Part Number: 121694-MMDT2227M-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz, 200MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V, 60V Max Vce (sat): 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 300mW

Manufacturer: Diodes Incorporated
Win Source Part Number: 121694-MMDT2227M-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz, 200MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V, 60V
Max Vce (sat): 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max): 10nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 300mW

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 121694-MMDT2227M-7
Product Name TRANSISTORS - Transistors (BJT) - Arrays - MMDT2227M-7
Operating Temperature -55 to 150 C (-67 to 302 F)
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