DIODES Incorporated TRANSISTORS - RF Transistors (BJT) - MMBTH10-7 MMBTH10-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 059169-MMBTH10-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 300mW
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 059169-MMBTH10-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 300mW
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - MMBTH10-7 - 059169-MMBTH10-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MMBTH10-7
059169-MMBTH10-7
TRANSISTORS - RF Transistors (BJT) - MMBTH10-7 059169-MMBTH10-7
Manufacturer: Diodes Incorporated Win Source Part Number: 059169-MMBTH10-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 300mW

Manufacturer: Diodes Incorporated
Win Source Part Number: 059169-MMBTH10-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 650MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Typical Gain (hFE) (Min): 60 @ 4mA, 10V
Maximum Power Dissipation: 300mW

Buy Now Datasheet
Singapore
25V 650MHZ SOT23 Bipolar Transistor
283-MMBTH10-7
25V 650MHZ SOT23 Bipolar Transistor 283-MMBTH10-7
RF TRANS NPN 25V 650MHZ SOT23-3 Product overview: MMBTH10-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 650MHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 650MHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MMBTH10-7 can be used for catalog matching and distributor lookup.

RF TRANS NPN 25V 650MHZ SOT23-3 Product overview: MMBTH10-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 650MHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 650MHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MMBTH10-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - MMBTH10-7 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MMBTH10-7
Bipolar RF Transistors MMBTH10-7
RF TRANS NPN 25V 650MHZ SOT23-3

RF TRANS NPN 25V 650MHZ SOT23-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBTH10-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBTH10-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBTH10-7
RF TRANS NPN 25V 650MHZ SOT23-3

RF TRANS NPN 25V 650MHZ SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 059169-MMBTH10-7 283-MMBTH10-7 MMBTH10-7 MMBTH10-7
Product Name TRANSISTORS - RF Transistors (BJT) - MMBTH10-7 25V 650MHZ SOT23 Bipolar Transistor Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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