The MMBTA06 is an NPN bipolar junction transistor in an SOT-23 package, designed for low-power amplification and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 500 mA, and a power dissipation of 300 mW under minimum recommended pad layout conditions. The device features a DC current gain (hFE) of at least 100 at 10 mA collector current, a collector-emitter saturation voltage of up to 0.25 V at 100 mA collector current, and a current gain-bandwidth product of 100 MHz. It is RoHS compliant, halogen and antimony free, and meets UL 94 V-0 flammability rating. The MMBTA06 is AEC-Q101 qualified for automotive applications. Operating and storage junction temperatures range from -55°C to +150°C.
Trans GP BJT NPN 80V 0.5A 300mW 3-Pin SOT-23 Product overview: MMBTA06 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 0.5A, 300mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 0.5A, 300mW, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBTA06 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMBTA06 |
| Product Name | 80V 0.5A 300mW SOT-23 Bipolar Transistor |
| IC(max) | 500 milliamps |
