DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - MMBT5551-7 MMBT5551-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 1224996-MMBT5551-7
Packaging: Cut Tape (CT)
Mounting Style: SMD
Transistor Type: NPN
Frequency - Transition: 300MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 600mA
Voltage - Collector Emitter Breakdown (Maximum): 160V
Current - Collector Cutoff (Maximum): 50nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Family Part Number: MMBT5551
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 200mV at 5mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 80 at 10mA, 5V
Maximum Power: 300mW

BJT SOT23 160V NPN 0.25W 150C Product overview: MMBT5551-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 0.25W, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 0.25W, SOT23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT5551-7 can be used for catalog matching and distributor lookup.