DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - MMBT5551-7 MMBT5551-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1224996-MMBT5551-7 Packaging: Cut Tape (CT) Mounting Style: SMD Transistor Type: NPN Frequency - Transition: 300MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 160V Current - Collector Cutoff (Maximum): 50nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Family Part Number: MMBT5551 Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 200mV at 5mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 80 at 10mA, 5V Maximum Power: 300mW
Request a Quote
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1224996-MMBT5551-7 Packaging: Cut Tape (CT) Mounting Style: SMD Transistor Type: NPN Frequency - Transition: 300MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 160V Current - Collector Cutoff (Maximum): 50nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Family Part Number: MMBT5551 Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 200mV at 5mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 80 at 10mA, 5V Maximum Power: 300mW
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MMBT5551-7 - 1224996-MMBT5551-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MMBT5551-7
1224996-MMBT5551-7
TRANSISTORS - Transistors (BJT) - Single - MMBT5551-7 1224996-MMBT5551-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1224996-MMBT5551-7 Packaging: Cut Tape (CT) Mounting Style: SMD Transistor Type: NPN Frequency - Transition: 300MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 160V Current - Collector Cutoff (Maximum): 50nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Family Part Number: MMBT5551 Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 200mV at 5mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 80 at 10mA, 5V Maximum Power: 300mW

Manufacturer: Diodes Incorporated
Win Source Part Number: 1224996-MMBT5551-7
Packaging: Cut Tape (CT)
Mounting Style: SMD
Transistor Type: NPN
Frequency - Transition: 300MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 600mA
Voltage - Collector Emitter Breakdown (Maximum): 160V
Current - Collector Cutoff (Maximum): 50nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Family Part Number: MMBT5551
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 200mV at 5mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 80 at 10mA, 5V
Maximum Power: 300mW

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MMBT5551-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MMBT5551-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MMBT5551-7
BJT SOT23 160V NPN 0.25W 150C

BJT SOT23 160V NPN 0.25W 150C

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1224996-MMBT5551-7 MMBT5551-7
Product Name TRANSISTORS - Transistors (BJT) - Single - MMBT5551-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3; SOT23 AEC-Q101
Packing Method Tape Reel; Cut Tape (CT) Tape Reel; Tape & Reel (TR),Cut Tape (CT)
TJ -55 to 150 C (-67 to 302 F)
Power Gain 80 dB
Unlock Full Specs
to access all available technical data