The MMBT5401 is a PNP bipolar junction transistor designed for low-power amplification and switching applications in a SOT-23 package. It has a collector-emitter voltage rating of -150 V, a collector current capability of -600 mA, and a power dissipation of 350 mW. The device features a thermal resistance from junction to ambient of 357 °C/W, an operating and storage temperature range of -55 °C to +150 °C, and is qualified to AEC-Q101 standards. The package is molded plastic with UL 94 V-0 flammability rating, is lead-free, RoHS compliant, and meets J-STD-020 Level 1 moisture sensitivity. Its typical current gain (hFE) ranges from 50 to 240 at -1 mA to -10 mA collector current.
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 Product overview: MMBT5401 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 0.6A, 350mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 150V, 0.6A, 350mW, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT5401 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMBT5401 |
| Product Name | 150V 0.6A 350mW SOT-23 Bipolar Transistor |
| IC(max) | 600 milliamps |
