DIODES Incorporated Single Bipolar Transistors MMBT3904-13

NPN silicon bipolar junction transistor for medium power amplification and switching, housed in a surface-mount SOT-23 package measuring 2.92 x 1.30 x 1.13 mm. Maximum collector-emitter voltage is 40 V, continuous collector current is 200 mA, and power dissipation is 350 mW. Operating and storage junction temperature ranges from -55°C to +150°C. Thermal resistance junction-to-ambient is 357 K/W. Current gain (hFE) ranges from 30 to 300 depending on collector current. Collector-emitter saturation voltage is 0.2 V at 50 mA collector current and 5 mA base current. Current gain-bandwidth product is 300 MHz.