MMBT2222A is an NPN bipolar junction transistor for medium power amplification and switching applications in a SOT-23 package measuring 2.92 mm x 1.30 mm x 1.02 mm. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 600 mA, and a power dissipation of 350 mW. The device operates over a junction and storage temperature range of -55 °C to +150 °C. Terminal connections follow the SOT-23 pinout, and its packaging is molded plastic with solderable terminals compliant with MIL-STD-202, Method 208.
Trans GP BJT NPN 40V 0.6A 350mW 3-Pin SOT-23 Product overview: MMBT2222A from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.6A, 350mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.6A, 350mW, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT2222A can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMBT2222A |
| Product Name | 40V 0.6A 350mW SOT-23 Bipolar Transistor |
| IC(max) | 600 milliamps |
