DIODES Incorporated Single Bipolar Transistors MJD45H11Q-13

The MJD45H11Q-13 is a PNP medium power transistor in a TO252 (DPAK) package, designed for power switching and amplification applications. It has a collector-emitter voltage rating of -80V, continuous collector current of -8A, and peak pulse current of -16A. The device features a thermal resistance of 52°C/W when mounted on a 25mm x 25mm 1oz copper PCB and operates over a temperature range of -55°C to +150°C. It is AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability standards. The package weighs approximately 0.34 grams and uses a matte tin finish. The counterpart NPN transistor is the MJD44H11Q.