DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - MJD31C-13 MJD31C-13

Manufacturer: Diodes Incorporated
Win Source Part Number: 003608-MJD31C-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount TO-252, (D-Pak)

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount TO-252, (D-Pak)

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount TO-252, (D-Pak)

TRANS NPN 100V 3A TO252

TRANS NPN 100V 3A TO252 Product overview: MJD31C-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, TO252. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, TO252, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31C-13 can be used for catalog matching and distributor lookup.