DIODES Incorporated TRANSISTORS - Transistors (BJT) - Arrays - IMT4-7-F IMT4-7-F

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 068851-IMT4-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 500mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 6V Maximum Power Dissipation: 225mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 068851-IMT4-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 500mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 6V Maximum Power Dissipation: 225mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - IMT4-7-F - 068851-IMT4-7-F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - IMT4-7-F
068851-IMT4-7-F
TRANSISTORS - Transistors (BJT) - Arrays - IMT4-7-F 068851-IMT4-7-F
Manufacturer: Diodes Incorporated Win Source Part Number: 068851-IMT4-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 500mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 6V Maximum Power Dissipation: 225mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 068851-IMT4-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 500mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 2mA, 6V
Maximum Power Dissipation: 225mW
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - IMT4-7-F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IMT4-7-F
Discrete Semiconductor Products - Transistors - Bipolar (BJT) IMT4-7-F
TRANS 2PNP 120V 0.05A SOT26

TRANS 2PNP 120V 0.05A SOT26

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 068851-IMT4-7-F IMT4-7-F
Product Name TRANSISTORS - Transistors (BJT) - Arrays - IMT4-7-F Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; 2 PNP (Dual)
Unlock Full Specs
to access all available technical data