DIODES Incorporated TRANSISTORS - Transistors (BJT) - Arrays - HBDM60V600W-7 HBDM60V600W-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 067820-HBDM60V600W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 500mA, 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V, 60V Max Vce (sat): 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V / 100 @ 150mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 067820-HBDM60V600W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 500mA, 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V, 60V Max Vce (sat): 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V / 100 @ 150mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Arrays - HBDM60V600W-7 - 067820-HBDM60V600W-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - HBDM60V600W-7
067820-HBDM60V600W-7
TRANSISTORS - Transistors (BJT) - Arrays - HBDM60V600W-7 067820-HBDM60V600W-7
Manufacturer: Diodes Incorporated Win Source Part Number: 067820-HBDM60V600W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 500mA, 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V, 60V Max Vce (sat): 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V / 100 @ 150mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 067820-HBDM60V600W-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 500mA, 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V, 60V
Max Vce (sat): 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 100mA, 1V / 100 @ 150mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 067820-HBDM60V600W-7
Product Name TRANSISTORS - Transistors (BJT) - Arrays - HBDM60V600W-7
Operating Temperature -55 to 150 C (-67 to 302 F)
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