DIODES Incorporated Bipolar RF Transistors FMMTH10TA

Description
RF Transistor NPN 25V 25mA 650MHz 330mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
RF Transistor NPN 25V 25mA 650MHz 330mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - FMMTH10TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
FMMTH10TR-ND
Bipolar RF Transistors FMMTH10TR-ND
RF Transistor NPN 25V 25mA 650MHz 330mW Surface Mount SOT-23-3

RF Transistor NPN 25V 25mA 650MHz 330mW Surface Mount SOT-23-3

Buy Now Datasheet
Bipolar RF Transistors - FMMTH10TA - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
FMMTH10TA
Bipolar RF Transistors FMMTH10TA
RF TRANS NPN 25V 650MHZ SOT23-3

RF TRANS NPN 25V 650MHZ SOT23-3

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - FMMTH10TA - 104704-FMMTH10TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - FMMTH10TA
104704-FMMTH10TA
TRANSISTORS - RF Transistors (BJT) - FMMTH10TA 104704-FMMTH10TA
Manufacturer: Diodes Incorporated Win Source Part Number: 104704-FMMTH10TA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 650MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 3dB to 5dB @ 500MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Typical Gain (hFE) (Min): 60 @ 4mA, 10V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Diodes Incorporated
Win Source Part Number: 104704-FMMTH10TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 650MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 3dB to 5dB @ 500MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 25mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Typical Gain (hFE) (Min): 60 @ 4mA, 10V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
TRANS RF NPN 25V 25MA SOT23-3 - 233-FMMTH10TA - Utmel Electronic Limited
Hong Kong, China
TRANS RF NPN 25V 25MA SOT23-3
233-FMMTH10TA
TRANS RF NPN 25V 25MA SOT23-3 233-FMMTH10TA
TRANS RF NPN 25V 25MA SOT23-3

TRANS RF NPN 25V 25MA SOT23-3

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FMMTH10TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FMMTH10TA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FMMTH10TA
RF TRANS NPN 25V 650MHZ SOT23-3

RF TRANS NPN 25V 650MHZ SOT23-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number FMMTH10TR-ND FMMTH10TA 104704-FMMTH10TA 233-FMMTH10TA FMMTH10TA
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - FMMTH10TA TRANS RF NPN 25V 25MA SOT23-3 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3
IC(max) 25 milliamps
VCEO 25 volts 25 volts
Noise Figure 3 to 5 dB 3 to 5 dB
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