DIODES Incorporated TRANSISTORS - RF Transistors (BJT) - FMMT5179TA FMMT5179TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 104882-FMMT5179TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 15dB
Frequency - Transition: 2GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 25 @ 3mA, 1V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

RF TRANS NPN 12V 2GHZ SOT23-3 Product overview: FMMT5179TA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 2GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-FMMT5179TA can be used for catalog matching and distributor lookup.

RF Transistor NPN 12V 50mA 2GHz 330mW Surface Mount SOT-23-3