DIODES Incorporated TRANSISTORS - RF Transistors (BJT) - FMMT4124TA FMMT4124TA

Manufacturer: Diodes Incorporated
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1059452-FMMT4124TA
Packaging: Tape & Reel (TR)
Current Rating: 200 mA
Length: 3.05 mm
Mounting: SMD (SMT)
Polarity: NPN
Height: 1 mm
Weight: 200.998119 mg
Gain Bandwidth Product: 300 MHz
Width: 1.4 mm
Categories: RF Transistors(BJT)
Case / Package: TO-236-3
Popularity: Low
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Contains Lead
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 25 V
Element Configuration: Single
Max Power Dissipation: 330 mW
Max Breakdown Voltage: 25 V
Collector Base Voltage (VCBO): 30 V
Collector Emitter Breakdown Voltage: 25 V
Collector Emitter Voltage (VCEO): 400 mV
Emitter Base Voltage (VEBO): 5 V
Max Collector Current: 200 mA
Transition Frequency: 250 MHz

Trans GP BJT NPN 25V 0.2A 3-Pin SOT-23 Product overview: FMMT4124TA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.2A, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 0.2A, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-FMMT4124TA can be used for catalog matching and distributor lookup.