DIODES Incorporated TRANSISTORS - RF Transistors (BJT) - FMMT4123TA FMMT4123TA

Manufacturer: Diodes Incorporated
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1059451-FMMT4123TA
Packaging: Tape & Reel (TR)
Current Rating: 200 mA
Mounting: SMD (SMT)
Polarity: NPN
Gain Bandwidth Product: 250 MHz
Categories: RF Transistors(BJT)
Case / Package: TO-236-3
Popularity: Low
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Contains Lead
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 30 V
Element Configuration: Single
Max Power Dissipation: 330 mW
Max Breakdown Voltage: 30 V
Collector Base Voltage (VCBO): 40 V
Collector Emitter Breakdown Voltage: 30 V
Collector Emitter Voltage (VCEO): 400 mV
Emitter Base Voltage (VEBO): 5 V
Max Collector Current: 200 mA
Transition Frequency: 200 MHz

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon Product overview: FMMT4123TA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2A, 30V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2A, 30V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-FMMT4123TA can be used for catalog matching and distributor lookup.