DIODES Incorporated TRANSISTORS - RF Transistors (BJT) - FMMT2369TA FMMT2369TA

Manufacturer: Diodes Incorporated Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059445-FMMT2369TA Packaging: Tape & Reel (TR) Current Rating: 200 mA Length: 3.05 mm Mounting: SMD (SMT) Polarity: NPN Number of Elements: 1 Power Dissipation: 330 mW Height: 1 mm Weight: 200.998119 mg Number of Pins: 3 Width: 1.4 mm Categories: RF Transistors(BJT) Case / Package: SOT-23 Popularity: Low Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Contains Lead Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 15 V Element Configuration: Single Max Power Dissipation: 330 mW Max Breakdown Voltage: 60 V Collector Base Voltage (VCBO): 40 V Collector Emitter Breakdown Voltage: 60 V Collector Emitter Voltage (VCEO): 15 V Emitter Base Voltage (VEBO): 4.5 V Max Collector Current: 200 mA Transition Frequency: 200 MHz