DIODES Incorporated Single Diodes FES1DE

Description
DIODE GP 200V 1A DO219AA TR
Request a Quote Datasheet
Description
DIODE GP 200V 1A DO219AA TR
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Diodes - FES1DE - ODG (Origin Data Global)
Shenzhen, China
Single Diodes
FES1DE
Single Diodes FES1DE
DIODE GP 200V 1A DO219AA TR

DIODE GP 200V 1A DO219AA TR

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes - 1366815-FES1DE - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
1366815-FES1DE
Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes 1366815-FES1DE
Win Source Part Number: 1366815-FES1DE Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated Package: Tape & Reel Product Status: Active Package / Case: DO-219AA Supplier Device Package: DO-219AA Technology: Standard Mounting Type: Surface Mount HTSUS: 8541.10.0080 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Operating Temperature - Junction: -55°C ~ 150°C

Win Source Part Number: 1366815-FES1DE
Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Active
Package / Case: DO-219AA
Supplier Device Package: DO-219AA
Technology: Standard
Mounting Type: Surface Mount
HTSUS: 8541.10.0080
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Operating Temperature - Junction: -55°C ~ 150°C

Buy Now Datasheet
Single Diodes - 31-FES1DEDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
31-FES1DEDKR-ND
Single Diodes 31-FES1DEDKR-ND
Diode

Diode

Buy Now Datasheet
Single Diodes - 31-FES1DETR-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
31-FES1DETR-ND
Single Diodes 31-FES1DETR-ND
Diode

Diode

Buy Now Datasheet
Single Diodes - 31-FES1DECT-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
31-FES1DECT-ND
Single Diodes 31-FES1DECT-ND
Diode

Diode

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - FES1DE - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Rectifiers
FES1DE
Discrete Semiconductor Products - Diodes - Rectifiers FES1DE
DIODE GP 200V 1A DO219AA TR

DIODE GP 200V 1A DO219AA TR

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Diodes Diodes Diodes Rectifiers
Product Number FES1DE 1366815-FES1DE 31-FES1DEDKR-ND FES1DE
Product Name Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers
VF 0.9200 volts 0.9200 volts 0.9200 volts
VR 200 volts 200 volts
IR 0.0050 mA 0.0050 mA
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