DIODES Incorporated Bipolar Transistor Arrays, Pre-Biased EMF21-7

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563

TRANS NPN PREBIAS/PNP SOT563 Product overview: EMF21-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMF21-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 103582-EMF21-7
Packaging: Cut Reel
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 280MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-563
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance