DIODES Incorporated TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 EMF21-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 103582-EMF21-7 Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 250MHz, 280MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-563 Maximum Current Collector: 100mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 103582-EMF21-7 Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 250MHz, 280MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-563 Maximum Current Collector: 100mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 - 103582-EMF21-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7
103582-EMF21-7
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 103582-EMF21-7
Manufacturer: Diodes Incorporated Win Source Part Number: 103582-EMF21-7 Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 250MHz, 280MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-563 Maximum Current Collector: 100mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 103582-EMF21-7
Packaging: Cut Reel
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 280MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-563
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
Bipolar Transistor
293-EMF21-7
Bipolar Transistor 293-EMF21-7
TRANS NPN PREBIAS/PNP SOT563 Product overview: EMF21-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMF21-7 can be used for catalog matching and distributor lookup.

TRANS NPN PREBIAS/PNP SOT563 Product overview: EMF21-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMF21-7 can be used for catalog matching and distributor lookup.

Supplier's Site
Bipolar Transistor Arrays, Pre-Biased - EMF21DITR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMF21DITR-ND
Bipolar Transistor Arrays, Pre-Biased EMF21DITR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMF21-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMF21-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMF21-7
TRANS NPN PREBIAS/PNP SOT563

TRANS NPN PREBIAS/PNP SOT563

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 103582-EMF21-7 293-EMF21-7 EMF21DITR-ND EMF21-7
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP; 1 NPN Pre-Biased, 1 PNP NPN; PNP
Package Type SOT3; SOT-563 Tape & Reel (TR) SOT-563, SOT-666
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 1.00E6 to ? milliamps 100 to 500 milliamps
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