DIODES Incorporated Bipolar Transistor Arrays, Pre-Biased EMF21-7

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563
  • Bipolar Transistor Arrays, Pre-Biased - EMF21DITR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 - 103582-EMF21-7 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMF21-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - EMF21DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMF21DITR-ND
Bipolar Transistor Arrays, Pre-Biased EMF21DITR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 280MHz 300mW Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 - 103582-EMF21-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7
103582-EMF21-7
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 103582-EMF21-7
Manufacturer: Diodes Incorporated Win Source Part Number: 103582-EMF21-7 Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 250MHz, 280MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-563 Maximum Current Collector: 100mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 103582-EMF21-7
Packaging: Cut Reel
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 280MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-563
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 270 @ 10mA, 2V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMF21-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMF21-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMF21-7
TRANS NPN PREBIAS/PNP SOT563

TRANS NPN PREBIAS/PNP SOT563

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number EMF21DITR-ND 103582-EMF21-7 EMF21-7
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF21-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 1 NPN Pre-Biased, 1 PNP
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