DIODES Incorporated Single Bipolar Transistors DXTN5860DFDB-7

TRANS NPN 60V 6A UDFN2020-3

TRANS NPN 60V 6A UDFN2020-3

TRANS NPN 60V 6A UDFN2020-3

SS LOW SAT TRANSISTOR U-DFN2020- Product overview: DXTN5860DFDB-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DXTN5860DFDB-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1354171-DXTN5860DFDB-7
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 46 pct.
REACH Status: REACH Unaffected
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Active
Package / Case: 3-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-3 (Type B)
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 115MHz
Power - Max: 690 mW