DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DXT5551P5-13 DXT5551P5-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1035635-DXT5551P5-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI 5 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 2.25W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors (BJT) - Single - DXT5551P5-13 - 1035635-DXT5551P5-13 - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - DXT5551P5-13TR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - DXT5551P5-13DKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - DXT5551P5-13CT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - DXT5551P5-13 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DXT5551P5-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Trans, Npn, 160V, 0.6A, 150Deg C, 2.25W Rohs Compliant Diodes Inc. - 28AK8998 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1035635-DXT5551P5-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI 5 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 2.25W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DXT5551P5-13 - 1035635-DXT5551P5-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DXT5551P5-13
1035635-DXT5551P5-13
TRANSISTORS - Transistors (BJT) - Single - DXT5551P5-13 1035635-DXT5551P5-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1035635-DXT5551P5-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI 5 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 2.25W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1035635-DXT5551P5-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI 5
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 2.25W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single Bipolar Transistors - DXT5551P5-13TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DXT5551P5-13TR-ND
Single Bipolar Transistors DXT5551P5-13TR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W Surface Mount PowerDI™ 5

Buy Now Datasheet
Single Bipolar Transistors - DXT5551P5-13DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DXT5551P5-13DKR-ND
Single Bipolar Transistors DXT5551P5-13DKR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W Surface Mount PowerDI™ 5

Buy Now Datasheet
Single Bipolar Transistors - DXT5551P5-13CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DXT5551P5-13CT-ND
Single Bipolar Transistors DXT5551P5-13CT-ND
Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W Surface Mount PowerDI™ 5

Buy Now Datasheet
Single Bipolar Transistors - DXT5551P5-13 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DXT5551P5-13
Single Bipolar Transistors DXT5551P5-13
TRANS NPN 160V 0.6A POWERDI5

TRANS NPN 160V 0.6A POWERDI5

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DXT5551P5-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DXT5551P5-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DXT5551P5-13
TRANS NPN 160V 0.6A POWERDI5

TRANS NPN 160V 0.6A POWERDI5

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
DXT5551P5-13
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT DXT5551P5-13
160V 2.25W 80@10mA,5V 600mA NPN PowerDI-5 Bipolar Transistors - BJT ROHS

160V 2.25W 80@10mA,5V 600mA NPN PowerDI-5 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Trans, Npn, 160V, 0.6A, 150Deg C, 2.25W Rohs Compliant Diodes Inc. - 28AK8998 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 160V, 0.6A, 150Deg C, 2.25W Rohs Compliant Diodes Inc.
28AK8998
Trans, Npn, 160V, 0.6A, 150Deg C, 2.25W Rohs Compliant Diodes Inc. 28AK8998
TRANS, NPN, 160V, 0.6A, 150DEG C, 2.25W ROHS COMPLIANT: YES

TRANS, NPN, 160V, 0.6A, 150DEG C, 2.25W ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 1035635-DXT5551P5-13 DXT5551P5-13TR-ND DXT5551P5-13 DXT5551P5-13 DXT5551P5-13 28AK8998
Product Name TRANSISTORS - Transistors (BJT) - Single - DXT5551P5-13 Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Trans, Npn, 160V, 0.6A, 150Deg C, 2.25W Rohs Compliant Diodes Inc.
Polarity NPN; NPN NPN NPN; NPN NPN NPN
Package Type SOT3; PowerDI 5 PowerDI™ 5 PowerDI™ 5 TO-3
IC(max) 600 milliamps 600 milliamps 600 milliamps
VCEO 160 volts 160 volts 160 volts
Operating Frequency 130 MHz
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