DIODES Incorporated Single Bipolar Transistors DXT2011P5-13

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

TRANS NPN 100V 6A POWERDI5 Product overview: DXT2011P5-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 6A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DXT2011P5-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1035630-DXT2011P5-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Family Name: DXT2011P5
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI 5
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 220mV @ 500mA, 5A
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 2A, 2V
Maximum Power Dissipation: 3.2W
Alternative Parts (Cross-Reference): 2SC4331-Z-AZ; 2SD1257A; 2SC4331-ZL;
Introduction Date: March 03, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

TRANS NPN 100V 6A POWERDI5