DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DXT2011P5-13 DXT2011P5-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1035630-DXT2011P5-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Family Name: DXT2011P5 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI 5 Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 220mV @ 500mA, 5A Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 3.2W Alternative Parts (Cross-Reference): 2SC4331-Z-AZ; 2SD1257A; 2SC4331-ZL; Introduction Date: March 03, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1035630-DXT2011P5-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Family Name: DXT2011P5 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI 5 Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 220mV @ 500mA, 5A Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 3.2W Alternative Parts (Cross-Reference): 2SC4331-Z-AZ; 2SD1257A; 2SC4331-ZL; Introduction Date: March 03, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DXT2011P5-13 - 1035630-DXT2011P5-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DXT2011P5-13
1035630-DXT2011P5-13
TRANSISTORS - Transistors (BJT) - Single - DXT2011P5-13 1035630-DXT2011P5-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1035630-DXT2011P5-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Family Name: DXT2011P5 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI 5 Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 220mV @ 500mA, 5A Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 3.2W Alternative Parts (Cross-Reference): 2SC4331-Z-AZ; 2SD1257A; 2SC4331-ZL; Introduction Date: March 03, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1035630-DXT2011P5-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Family Name: DXT2011P5
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI 5
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 220mV @ 500mA, 5A
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 2A, 2V
Maximum Power Dissipation: 3.2W
Alternative Parts (Cross-Reference): 2SC4331-Z-AZ; 2SD1257A; 2SC4331-ZL;
Introduction Date: March 03, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - DXT2011P5-13CT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DXT2011P5-13CT-ND
Single Bipolar Transistors DXT2011P5-13CT-ND
Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Buy Now Datasheet
Single Bipolar Transistors - DXT2011P5-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DXT2011P5-13TR-ND
Single Bipolar Transistors DXT2011P5-13TR-ND
Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Buy Now Datasheet
Single Bipolar Transistors - DXT2011P5-13DKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DXT2011P5-13DKR-ND
Single Bipolar Transistors DXT2011P5-13DKR-ND
Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W Surface Mount PowerDI™ 5

Buy Now Datasheet
Single Bipolar Transistors - DXT2011P5-13 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DXT2011P5-13
Single Bipolar Transistors DXT2011P5-13
TRANS NPN 100V 6A POWERDI5

TRANS NPN 100V 6A POWERDI5

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DXT2011P5-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DXT2011P5-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DXT2011P5-13
TRANS NPN 100V 6A POWERDI5

TRANS NPN 100V 6A POWERDI5

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1035630-DXT2011P5-13 DXT2011P5-13CT-ND DXT2011P5-13 DXT2011P5-13
Product Name TRANSISTORS - Transistors (BJT) - Single - DXT2011P5-13 Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN
Package Type SOT3; PowerDI 5 PowerDI™ 5 PowerDI™ 5
IC(max) 6000 milliamps 6000 milliamps
VCEO 100 volts 100 volts
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