DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DVR5V0W-7 DVR5V0W-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 015089-DVR5V0W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 18V Max Vce (sat): 500mV @ 30mA, 300mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 150 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 015089-DVR5V0W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 18V Max Vce (sat): 500mV @ 30mA, 300mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 150 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DVR5V0W-7 - 015089-DVR5V0W-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DVR5V0W-7
015089-DVR5V0W-7
TRANSISTORS - Transistors (BJT) - Single - DVR5V0W-7 015089-DVR5V0W-7
Manufacturer: Diodes Incorporated Win Source Part Number: 015089-DVR5V0W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 18V Max Vce (sat): 500mV @ 30mA, 300mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 150 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 015089-DVR5V0W-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN + Zener Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 18V
Max Vce (sat): 500mV @ 30mA, 300mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 150 @ 100mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
18V 1A 200mW Bipolar Transistor
276-DVR5V0W-7
18V 1A 200mW Bipolar Transistor 276-DVR5V0W-7
Trans GP BJT NPN 18V 1A 200mW 6-Pin SOT-363 T/R Product overview: DVR5V0W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 1A, 200mW. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 1A, 200mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DVR5V0W-7 can be used for catalog matching and distributor lookup.

Trans GP BJT NPN 18V 1A 200mW 6-Pin SOT-363 T/R Product overview: DVR5V0W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 1A, 200mW. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 1A, 200mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DVR5V0W-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DVR5V0W-7
Bipolar Transistors - BJT DVR5V0W-7
Bipolar Transistors - BJT Complex Array

Bipolar Transistors - BJT Complex Array

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 015089-DVR5V0W-7 276-DVR5V0W-7 DVR5V0W-7
Product Name TRANSISTORS - Transistors (BJT) - Single - DVR5V0W-7 18V 1A 200mW Bipolar Transistor Bipolar Transistors - BJT
Polarity NPN; NPN + Zener Diode (Isolated) NPN
Package Type SOT3; SOT-363 Tape and Reel
Packing Method Tape and Reel
IC(max) 1000 milliamps
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