DIODES Incorporated Bipolar Transistor Arrays DSS45160FDB-7

Description
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)
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Description
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)
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Datasheet
Datasheet Summary
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The Win Source Electronics part number 1377091-DSS45160FDB-7 is a bipolar transistor array featuring complementary NPN and PNP transistors. The NPN transistor has a collector-emitter breakdown voltage (VCEO) greater than 60V and supports a continuous collector current (IC) of 1A, with a low saturation voltage (VCE(sat)) of less than 220mV at 1A. The PNP transistor similarly has a VCEO greater than -60V and supports a continuous collector current of -1A, with a saturation voltage of less than -340mV at -1A. This device is rated for a maximum power dissipation of 2.47W, making it suitable for power-demanding applications. It is housed in a low-profile U-DFN2020-6 package, which is 0.6mm high, and is designed for surface mount applications. The product is fully RoHS compliant and is categorized as a "Green" device, being halogen and antimony-free. The transistor array is applicable in various circuits, including gate driving, load switches, power management, charging circuits, and power switches for motors and fans. The operating temperature range is from -55¬8C to +150¬8C, and it has a moisture sensitivity level of 1, indicating it can be handled without special precautions.

Datasheet Summary
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The Win Source Electronics part number 1377091-DSS45160FDB-7 is a bipolar transistor array featuring complementary NPN and PNP transistors. The NPN transistor has a collector-emitter breakdown voltage (VCEO) greater than 60V and supports a continuous collector current (IC) of 1A, with a low saturation voltage (VCE(sat)) of less than 220mV at 1A. The PNP transistor similarly has a VCEO greater than -60V and supports a continuous collector current of -1A, with a saturation voltage of less than -340mV at -1A. This device is rated for a maximum power dissipation of 2.47W, making it suitable for power-demanding applications. It is housed in a low-profile U-DFN2020-6 package, which is 0.6mm high, and is designed for surface mount applications. The product is fully RoHS compliant and is categorized as a "Green" device, being halogen and antimony-free. The transistor array is applicable in various circuits, including gate driving, load switches, power management, charging circuits, and power switches for motors and fans. The operating temperature range is from -55¬8C to +150¬8C, and it has a moisture sensitivity level of 1, indicating it can be handled without special precautions.

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays - DSS45160FDB-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
DSS45160FDB-7DICT-ND
Bipolar Transistor Arrays DSS45160FDB-7DICT-ND
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)

Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)

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Bipolar Transistor Arrays - DSS45160FDB-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
DSS45160FDB-7DITR-ND
Bipolar Transistor Arrays DSS45160FDB-7DITR-ND
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)

Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)

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Bipolar Transistor Arrays - DSS45160FDB-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
DSS45160FDB-7DIDKR-ND
Bipolar Transistor Arrays DSS45160FDB-7DIDKR-ND
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)

Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays - 1377091-DSS45160FDB-7 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
1377091-DSS45160FDB-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays 1377091-DSS45160FDB-7
Win Source Part Number: 1377091-DSS45160FDB- 7 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated Package: Tape & Reel Product Status: Active Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B) Base Product Number: DSS45160 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 175MHz, 65MHz Power - Max: 405mW

Win Source Part Number: 1377091-DSS45160FDB-7
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Package: Tape & Reel
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Base Product Number: DSS45160
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 175MHz, 65MHz
Power - Max: 405mW

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Bipolar Transistor Arrays - DSS45160FDB-7 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
DSS45160FDB-7
Bipolar Transistor Arrays DSS45160FDB-7
TRANS NPN/PNP 1A 60V U-DFN2020-6

TRANS NPN/PNP 1A 60V U-DFN2020-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DSS45160FDB-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DSS45160FDB-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DSS45160FDB-7
TRANS NPN/PNP 1A 60V U-DFN2020-6

TRANS NPN/PNP 1A 60V U-DFN2020-6

Supplier's Site
TRANS NPN/PNP 1A 60V U-DFN2020-6 - 233-DSS45160FDB-7 - Utmel Electronic Limited
Hong Kong, China
TRANS NPN/PNP 1A 60V U-DFN2020-6
233-DSS45160FDB-7
TRANS NPN/PNP 1A 60V U-DFN2020-6 233-DSS45160FDB-7
TRANS NPN/PNP 1A 60V U-DFN2020-6

TRANS NPN/PNP 1A 60V U-DFN2020-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DSS45160FDB-7
Bipolar Transistors - BJT DSS45160FDB-7
Bipolar Transistors - BJT SS Low Sat Transistor

Bipolar Transistors - BJT SS Low Sat Transistor

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number DSS45160FDB-7DICT-ND 1377091-DSS45160FDB-7 DSS45160FDB-7 DSS45160FDB-7 233-DSS45160FDB-7 DSS45160FDB-7
Product Name Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS NPN/PNP 1A 60V U-DFN2020-6 Bipolar Transistors - BJT
Polarity NPN; PNP NPN; PNP NPN, PNP; NPN; PNP NPN; PNP; NPN, PNP
Package Type 6-UDFN Exposed Pad SOT3 6-UDFN Exposed Pad U-DFN2020-6 (Type B)
IC(max) 1000 milliamps 1000 milliamps
VCEO 60 volts 60 volts
Operating Frequency 175 to 65 MHz
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