DIODES Incorporated Single Bipolar Transistors DSS4220V-7

Description
TRANS NPN 20V 2A SOT563
Request a Quote Datasheet
Description
TRANS NPN 20V 2A SOT563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - DSS4220V-7 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DSS4220V-7
Single Bipolar Transistors DSS4220V-7
TRANS NPN 20V 2A SOT563

TRANS NPN 20V 2A SOT563

Supplier's Site Datasheet
Single Bipolar Transistors - DSS4220VDI-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DSS4220VDI-ND
Single Bipolar Transistors DSS4220VDI-ND
Bipolar (BJT) Transistor NPN 20V 2A 260MHz 600mW Surface Mount SOT-563

Bipolar (BJT) Transistor NPN 20V 2A 260MHz 600mW Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - DSS4220V-7 - 014915-DSS4220V-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DSS4220V-7
014915-DSS4220V-7
TRANSISTORS - Transistors (BJT) - Single - DSS4220V-7 014915-DSS4220V-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014915-DSS4220V-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 260MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 350mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 200 @ 1A, 2V Maximum Power Dissipation: 600mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 014915-DSS4220V-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 260MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 350mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 200 @ 1A, 2V
Maximum Power Dissipation: 600mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DSS4220V-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DSS4220V-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DSS4220V-7
TRANS NPN 20V 2A SOT563

TRANS NPN 20V 2A SOT563

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number DSS4220V-7 DSS4220VDI-ND 014915-DSS4220V-7 DSS4220V-7
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - DSS4220V-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN
Package Type SOT-563, SOT-666 SOT-563, SOT-666 SOT3; SOT-563 SOT-563
IC(max) 2000 milliamps 2000 milliamps
VCEO 20 volts 20 volts
Unlock Full Specs
to access all available technical data